| PART |
Description |
Maker |
| AT22LV10 AT22LV10L AT22LV10L-30GM AT22LV10-20JL AT |
500 gate low voltage PLD, low power, 24 and 28 pins, 3V
30NS, OTP, CERDIP, MIL TEMP(EPLD)
Low-voltage UV
From old datasheet system
AT22LV10(L) [Updated 8/99. 12 Pages] 500 gate low voltage PLD. standard & low power. 24 pins
OT PLD, 20 ns, PQCC28
OT PLD, 25 ns, PQCC28
|
Atmel Corporation
N/A
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| INSOSSB |
400 mW low voltage avalanche low noise silicon zener diodes
|
New Jersey Semi-Conduct...
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BUP212 |
Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated
|
Infineon Technologies AG
|
| 1N5535A 1N5531B 1N5532B 1N5539A 1N5539B 1N5533B 1N |
Low Voltage Avalanche Zener
|
Microsemi
|
| 1N5532CUR-1E3 1N5543BUR-1E3 1N5532AUR-1E3 1N5532BU |
Low Voltage Avalanche Zener
|
Microsemi
|
| GAABJ35L |
Press Fit Avalanche Automotive Rectifier Avalanche Voltage 20 to 24Volts Current 35 Amps
|
GOOD-ARK Electronics
|
| GAAB40L |
Press Fit Avalanche Automotive Rectifier (BOSCH) Avalanche Voltage 20 to 24Volts Current 40 Amps
|
GOOD-ARK Electronics
|
| BUP300 Q67078-A4203-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BUP410 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated
From old datasheet system
|
Siemens Semiconductor Group
|
| BUP307 Q67078-A4201-A2 |
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) IGBT的（低正向压降高开关速度低尾电流的无闩锁雪崩额定
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
